EIC6472-8 specifications are subjec t to change without notice. excelics semiconductor, inc. 310 de guigne drive, sunnyvale, ca 94085 page 1 of 4 phone: 408-737-1711 fax: 408-737-1868 web: www.excelics.com revised october 2003 6.40-7.20 ghz 8-watt intern ally-matched power fet features ? 6.40 ? 7.20 ghz bandwidth ? input/output impedance matched to 50 ohms ? +39.5 dbm output power at 1db compression ? 9.5 db power gain at 1db compression ? 36% power added efficiency ? -46 dbc im3 at po = 28.5 dbm scl ? hermetic metal flange package ? 100% tested for dc, rf, and r th description the EIC6472-8 is a high power, highly linear, single stage mfet amplifier in a flange mount package. this amplifier features excelics? unique mesfet transistor technology. caution! esd sensitive device. electrical characteristics (t a = 25 c) symbol parameters/test conditions 1 min typ max units p 1db output power at 1db compression f = 6.40-7.20ghz v ds = 10 v, i dsq 2200ma 38.5 39.5 dbm g 1db gain at 1db compression f = 6.40-7.20ghz v ds = 10 v, i dsq 2200ma 8.5 9.5 db ? g gain flatness f = 6.40-7.20ghz v ds = 10 v, i dsq 2200ma 0.6 db pae power added efficiency at 1db compression v ds = 10 v, i dsq 2200ma f = 6.40-7.20ghz 36 % id 1db drain current at 1db compression f = 6.40-7.20ghz 2200 2600 ma im3 output 3rd order intermodulation distortion ? f = 10 mhz 2-tone test; pout = 28.5 dbm s.c.l 2 v ds = 10 v, i dsq 65% idss f = 7.20 ghz -43 -46 dbc i dss saturated drain current v ds = 3 v, v gs = 0 v 4000 4500 ma v p pinch-off voltage v ds = 3 v, i ds = 40 ma -2.5 -4.0 v r th thermal resistance 3 3.5 4 o c/w notes: 1. tested with 100 ohm gate resistor. 2. s.c.l. = single carrier level. 3. overall rth depends on case mounting.
EIC6472-8 specifications are subjec t to change without notice. excelics semiconductor, inc. 310 de guigne drive, sunnyvale, ca 94085 page 2 of 4 phone: 408-737-1711 fax: 408-737-1868 web: www.excelics.com revised october 2003 0 1.0 1.0 -1.0 10.0 1 0 . 0 - 1 0 . 0 5.0 5 . 0 - 5 . 0 2.0 2 . 0 - 2 . 0 3.0 3 . 0 - 3 . 0 4.0 4 . 0 - 4 . 0 0.2 0 . 2 - 0 . 2 0.4 0 .4 -0 . 4 0.6 0 . 6 - 0 . 6 0.8 0 . 8 - 0 . 8 s11 and s22 swp max 7.4ghz swp min 6.2ghz s[1,1] EIC6472-8 s[2,2] EIC6472-8 6.2 6.4 6.6 6.8 7 7.2 7.4 frequency (ghz) s21 and s12 -20 -10 0 10 20 s21 and s12 (db) db(|s[2,1]|) EIC6472-8 db(|s[1,2]|) EIC6472-8 absolute maximum ratings for continuous operation 1,2 symbol characteristic value v ds drain to source voltage 10 v v gs gate to source voltage -4.5 v i ds drain current idss i gsf forward gate current 80 ma p in input power @ 3db compression p t total power dissipation 32 w t ch channel temperature 150c t stg storage temperature -65/+150c notes: 1. operating the device beyond any of the above ratings may result in permanent damage or reduction of mttf. 2. bias conditions must also satisfy the following equation p t < (t ch ?t pkg )/r th ; where t pkg = temperature of package, and p t = (v ds * i ds ) ? (p out ? p in ). performance data typical s-parameters (t= 25c, 50 ? system, de-embedded to edge of package) v ds = 10 v, i dsq 2200ma freq --- s11 --- --- s21 --- --- s12 --- --- s22 --- (ghz) mag ang mag ang mag ang mag ang 5.8 0.7691 -59.89 2.4709 37. 54 0.0842 -23 0.3937 169.91 6.0 0.6925 -81.02 2.737 11.91 0.097 -47.68 0.4423 135.72 6.2 0.5944 -105.44 3.0092 - 14.9 0.1089 -73.62 0.493 104.65 6.4 0.4754 -134.77 3.2245 -43.07 0.1208 -101.3 0.5112 75.2 6.6 0.3499 -173.19 3.4136 -72. 55 0.1315 -129.81 0.4959 45.51 6.8 0.2507 129.61 3.4973 -103.52 0.1389 -160.34 0.4386 13.78 7.0 0.2665 59.43 3.4291 -135. 28 0.1408 169 0.3388 -22.61 7.2 0.3712 5.6 3.2015 -167.15 0.1359 138.35 0.2387 -70.85 7.4 0.4764 -33.41 2.8736 162.48 0.1272 108.36 0.2196 -134.09 7.6 0.5578 -67.13 2.5143 132.86 0.1125 79.22 0.3012 174.34 7.8 0.6096 -97.26 2.1393 104.58 0.0965 51.48 0.4095 141.65 8.0 0.6451 -124.95 1.7837 77.58 0.0825 26.06 0.5064 118.52
EIC6472-8 specifications are subjec t to change without notice. excelics semiconductor, inc. 310 de guigne drive, sunnyvale, ca 94085 page 3 of 4 phone: 408-737-1711 fax: 408-737-1868 web: www.excelics.com revised october 2003 power de-rating curve and im3 definition power dissipation vs. temperature 0 4 8 12 16 20 24 28 32 36 0 25 50 75 100 125 150 case temperature (c) total power dissipation (w) saf e operating region potentially unsaf e operating region f1 f2 (2f1-f2) f1 f2 (2f2-f1) im3 pout pin ip 3 = pout + im3/2 third-order intercept point ip3 f1 or f2 (2f2 - f1) or (2f1 - f2) pin [s.c.l.] (dbm) pout [s.c.l.] (dbm) im3 typical power data (v ds = 10 v, i dsq = 2200 ma) typical im3 data (v ds = 10 v, i dsq 65% idss ) p-1db & g-1db vs frequency 35 36 37 38 39 40 41 6.26.46.66.87.07.27.4 frequency (ghz) p-1db (dbm) 8 9 10 11 12 13 14 g-1db (db) p-1db (dbm) g-1db (db) im3 vs output power f1 = 7.20 ghz, f 2 = 7.21 ghz -65 -60 -55 -50 -45 -40 -35 -30 -25 -20 -15 23 24 25 26 27 28 29 30 31 32 33 34 35 pout [s.c.l.] (dbm) im3 (dbc ) im3 (dbc)
EIC6472-8 specifications are subjec t to change without notice. excelics semiconductor, inc. 310 de guigne drive, sunnyvale, ca 94085 page 4 of 4 phone: 408-737-1711 fax: 408-737-1868 web: www.excelics.com revised october 2003 package outline dimensions in inches, tolerance + .005 unless otherwise specified sn excelics ym ordering information part number grade 1 f test (ghz) p 1db (min) im 3 (min) 2 EIC6472-8 industrial 6.4-7.2 ghz 38.5 -43 notes: 1. contact factory for military and hi-rel grades. 2. exact test conditions are specified in ?electrical characteristics? table. EIC6472-8 source
|
